Polarization-induced resistance switching phenomenon in metal Au/ferroelectric vinylidene fluoride-trifluoroethylene/semiconductor Si junction

被引：3

作者：

Enomoto, Naoto ^{[1
]}

Hashizume, Yoichiro ^{[1
]}

Nakajima, Takashi ^{[1
,2
]}

Okamura, Yoichiro ^{[1
]}

机构：

[1] Tokyo Univ Sci, Fac Sci, Dept Appl Phys, Tokyo 1258585, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 10期

关键词：

TUNNEL ELECTRORESISTANCE; FERROELECTRICITY; MEMORY;

D O I：

10.7567/JJAP.56.10PF13

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The polarization-induced resistance switching effect in Au/vinylidene fluoride-trifluoroethylene (VDF-TrFE)/Si capacitor was investigated. The 20-nm-thick VDF/TrFE copolymer fabricated on n-Si with 1-3m Omega.cm resistivity exhibited an entire polarization reversal, which is almost comparable to the ferroelectric properties of a metal-ferroelectric-metal structure. The conduction current in the ON state, in which the polarization direction is from Au to Si, was 60 times larger than that in the OFF state. The large electroresistance effect was switchable by the polarization reversal of the VDF/TrFE copolymer film, which is essentially explained by the Thomas-Fermi screening theory. (C) 2017 The Japan Society of Applied Physics

引用

页数：5

共 2 条

[1] Study of Carrier Behavior in Pentacene in a Au/Pentacene/Ferroelectric Poly(vinylidene fluoride-trifluoroethylene)/Indium Tin Oxide Structure by Electric-Field-Induced Second-Harmonic Generation Measurement
Li, Jun
Le Zhang
Wei Ou-Yang
Taguchi, Dai
Manaka, Takaaki
Iwamoto, Mitsumasa
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (12)
[2] Electrical properties of metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using the polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE))/ZrO2/Si structure
Lee, Gwang-Geun
Han, Hui-Seong
Choi, Yun-Soo
Park, Byung-Eun
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2010, 118 (1383) : 1013 - 1016

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