Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure

被引：1
作者：
Tsai, Jung-Hui
Hsu, I-Hsuan
Weng, Tzu-Yen
Li, Chien-Ming
机构：
[1] Natl Kaohsiung Normal Univ, Dept Elect Engn, Kaohsiung, Taiwan
[2] Natl Kaohsiung Normal Univ, Dept Phys, Kaohsiung 802, Taiwan
来源：
MICROELECTRONICS JOURNAL | 2007年 / 38卷 / 6-7期
关键词：
InGaP/GaAs; heterostructure emitter; superlattice base; turn-on voltage; offset voltage;
D O I：
10.1016/j.mejo.2007.04.010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with InGaAs/GaAs super] attice-base structure is proposed and demonstrated by two-dimensional analysis. As compared with the traditional HEBT, the studied superlattice-base device exhibits a higher collector current, a higher current gain of 246, and a lower base-emitter (B-E) turn-on voltage of 0.966 V at a current level of 1 mu A, attributed to the increased charge storage of minority carriers in the InGaAs/GaAs superlattice- base region by tunneling behavior. The low turn-on voltage can reduce the operating voltage and collector-emitter offset voltage for low power consumption in circuit applications. (C) 2007 Elsevier Ltd. All rights reserved.
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页码：750 / 753
页数：4
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