Ultrafast charge transfer in graphene-WS2 Van der Waals heterostructures

被引：8

作者：

Song, Zongpeng ^{[1
,2
]}

Zhu, Haiou ^{[3
]}

Shi, Wentao ^{[1
,2
]}

Sun, Dalin ^{[1
,2
]}

Ruan, Shuangchen ^{[1
,2
]}

机构：

[1] Shenzhen Univ, Shenzhen Key Lab Laser Engn, Coll Optoelect Engn, Shenzhen 518060, Peoples R China

[2] Shenzhen Univ, Key Lab Adv Opt Precis Mfg Technol Guangdong High, Shenzhen 518060, Peoples R China

[3] Shenzhen Technol Univ, Coll New Mat & New Energies, Shenzhen 518118, Peoples R China

来源：

OPTIK | 2018年 / 174卷

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

Van der Waals heterostructures; Optical materials; Transition metal dichalcogenides; Electron transfer; Transient absorption; BANDGAP RENORMALIZATION; VALLEY POLARIZATION; ELECTRON-TRANSFER; WS2; FIELD; MOS2;

D O I：

10.1016/j.ijleo.2018.08.059

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

By using a graphene layer as fast carrier combination channel for WS2. Graphene-WS2 heterostructures be used as an example to study the charge transfer across the interface via transient absorption measurements. We found the transfer of photo-induced carriers from WS2 to graphene take place within 83 fs, this ultrafast transfer time supports the charge transfer mechanisms via layer-coupled states and Coulomb field. Our results provide the basic information for understanding the photo-induced carriers transfer across the interfaces of van der Waals heterostructures and suggest that van der Waals heterostructures may be useful in ultrafast optoelectronic devices.

引用

页码：62 / 67

页数：6

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