Damage reduction and sealing of low-k films by combined He and NH3 plasma treatment

被引：32

作者：

Urbanowicz, A. M. ^{[1
]}

Baklanov, M. R. ^{[1
]}

Heijlen, J. ^{[1
]}

Travaly, Y. ^{[1
]}

Cockburn, A. ^{[1
]}

机构：

[1] IMEC, Louvain, Belgium

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 10期

关键词：

LOW DIELECTRIC-CONSTANT; RADIATION;

D O I：

10.1149/1.2760189

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Modification of chemical vapor deposition low-k films upon sequential exposure to helium plasma and then ammonia plasma is characterized using various methods. The He plasma emits extreme ultraviolet (EUV) photons creating O-2 vacancies, which impacts surface reactive sites and induces localized chemical modifications in the first surface monolayers. The subsequent NH3 plasma treatment provides complete sealing of the low-k surface. The depth of the modification, which is a factor of merit of the sealing process, is limited because of the high absorption coefficient of silica-based low-k materials in the range of EUV emission. (C) 2007 The Electrochemical Society.

引用

页码：G76 / G79

页数：4

共 19 条

[1] Quantification of processing damage in porous low dielectric constant films [J].