Multiple exciton generation in quantum dot-based solar cells

被引：67

作者：

Goodwin, Heather ^{[1
]}

Jellicoe, Tom C. ^{[1
,2
]}

Davis, Nathaniel J. L. K. ^{[1
]}

Bohm, Marcus L. ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, J J Thomson Ave, Cambridge CB3 0HE, England

[2] Particle Works, Unit 3,Anglian Business Pk, Royston SG8 5TW, England

来源：

NANOPHOTONICS | 2018年 / 7卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

multiple exciton generation; quantum dots; solar cells; ULTRAFAST ELECTRON-TRANSFER; DETAILED BALANCE LIMIT; CARRIER MULTIPLICATION; SEMICONDUCTOR NANOCRYSTALS; IMPACT IONIZATION; PBSE NANOCRYSTALS; TRIPLET EXCITONS; COLLOIDAL NANOCRYSTALS; SILICON NANOCRYSTALS; SURFACE PASSIVATION;

D O I：

10.1515/nanoph-2017-0034

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Multiple exciton generation (MEG) in quantumconfined semiconductors is the process by which multiple bound charge-carrier pairs are generated after absorption of a single high-energy photon. Such charge-carrier multiplication effects have been highlighted as particularly beneficial for solar cells where they have the potential to increase the photocurrent significantly. Indeed, recent research efforts have proved that more than one chargecarrier pair per incident solar photon can be extracted in photovoltaic devices incorporating quantum-confined semiconductors. While these proof-of-concept applications underline the potential of MEG in solar cells, the impact of the carrier multiplication effect on the device performance remains rather low. This review covers recent advancements in the understanding and application of MEG as a photocurrent-enhancing mechanism in quantum dot-based photovoltaics.

引用

页码：111 / 126

页数：16

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