Low-threshold, high-power, high-brightness GaInAsSb/AlGaAsSb quantum-well lasers emitting at 2.05μm

被引：13

作者：

Choi, HK ^{[1
]}

Turner, GW ^{[1
]}

Walpole, JN ^{[1
]}

Manfra, MJ ^{[1
]}

Connors, MK ^{[1
]}

Missaggia, LJ ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02173 USA

来源：

IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II | 1998年 / 3284卷

关键词：

diode laser; semiconductor laser; tapered laser; quantum well; mid-infrared; molecular beam epitaxy; GaInAsSb; AlGaAsSb; GaSb; gain calculation; Auger recombination;

D O I：

10.1117/12.304462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained single-quantum-well GaInAsSb/AlGaAsSb diode lasers have exhibited roam-temperature threshold current densities as low as 50 A/cm(2), one of the lowest values reported for diode lasers at room temperature. These lasers, grown by molecular beam epitaxy, have emission wavelengths of similar to 2.05 mu m, characteristic temperature of 65 K, internal quantum efficiency of 95%, and internal loss coefficient of 7 cm(-1). Single-ended cw power of 1 W is obtained for a 100-mu m-wide broad-stripe laser. Tapered lasers with a 140-mu m aperture have exhibited diffraction-limited cw power up to 600 mW.

引用

页码：268 / 273

页数：6