Exploiting FeFET Switching Stochasticity for Low-Power Reconfigurable Physical Unclonable Function

被引:0
作者
Guo, Xinrui [1 ]
Ma, Xiaoyang [1 ]
Muller, Franz [3 ]
Olivo, Ricardo [3 ]
Wu, Juejian [1 ]
Ni, Kai [2 ]
Kampfe, Thomas [3 ]
Liu, Yongpan [1 ]
Yang, Huazhong [1 ]
Li, Xueqing [1 ]
机构
[1] Tsinghua Univ, EE Dept, BNRist ICFC, Beijing, Peoples R China
[2] Rochester Inst Technol, Rochester, NY 14623 USA
[3] Fraunhofer IPMS, Dresden, Germany
来源
IEEE 51ST EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2021) | 2021年
关键词
Physical unclonable function; FeFET; hardware security; stochasticity; reconfigurable PUF; offset cancellation; MEMORY;
D O I
10.1109/ESSDERC53440.2021.9631796
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper investigates reconfigurable physical unclonable function (PDF) design by exploiting the polarization switching variation and stochasticity in ferroelectric field-effect-transistors (FeFETs). The proposed PDFs include 1-transistor/cell (1T/C) and 2T/C designs. The denser 1T/C PDF splits random '0' and '1' states using a tactically pre-defined reference. The 2T/C PDF needs no dedicated references and obtains unbiased random states by differentiating two FeFETs under a proposed sensing error cancellation scheme. Experimental measurements have shown the uniform randomness, uniqueness, repeatability and reconfigurability of the response, Further simulations using an experimentally calibrated multi-domain FeFET model show high energy efficiency and robustness on design parameters.
引用
收藏
页码:119 / 122
页数:4
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