Improved diffusion barrier performance of Ru/TaN bilayer by N effusion in TaN underlayer

被引：12
作者：
Wang, L.
Cao, Z. H.
Hu, K.
She, Q. W.
Meng, X. K. [1 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2012年 / 135卷 / 2-3期
基金：
中国国家自然科学基金;
关键词：
RuN; Interface diffusion; Microstucture; Diffusion barrier; NITRIDE THIN-FILMS; CU METALLIZATION; RU; DEPOSITION; PROPERTY; COPPER; LAYER; NITROGEN; MICROSTRUCTURE; EVOLUTION;
D O I：
10.1016/j.matchemphys.2012.05.061
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Two bilayers of Ru/TaN with low N concentration and high N concentration (TaNL and TaNH) were used to determine the effect of N effusion on the barrier property. The results show that Ru/TaNH bilayer exhibits a better barrier property, in which RuN existed even after annealing at 650 degrees C. The improved barrier property is attributed to the formation of RuN and N atoms stuffing in grain boundaries of Ru layer by sufficient effusion N atoms from TaNH during annealing. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：806 / 809
页数：4
相关论文
共 33 条
[1]   5 nm ruthenium thin film as a directly plateable copper diffusion barrier [J].
Arunagiri, TN ;
Zhang, Y ;
Chyan, O ;
El-Bouanani, M ;
Kim, MJ ;
Chen, KH ;
Wu, CT ;
Chen, LC .
APPLIED PHYSICS LETTERS, 2005, 86 (08) :1-3
[2]   ION-BEAM-INDUCED DISSOCIATIVE CHEMISORPTION OF NITROGEN ON RU(0001) [J].
BIRCHEM, T ;
MUHLER, M .
SURFACE SCIENCE, 1995, 334 (1-3) :L701-L704
[3]   Barrier layer and annealing temperature dependent microstructure evolution of nanocrystalline Cu films [J].
Cao, Z. H. ;
Lu, H. M. ;
Meng, X. K. .
MATERIALS CHEMISTRY AND PHYSICS, 2009, 117 (01) :321-325
[4]   Thickness and grain size dependent mechanical properties of Cu films studied by nanoindentation tests [J].
Cao, Z. H. ;
Li, P. Y. ;
Lu, H. M. ;
Huang, Y. L. ;
Meng, X. K. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (06)
[5]   Diffusion studies of copper on ruthenium thin film - A plateable copper diffusion barrier [J].
Chan, R ;
Arunagiri, TN ;
Zhang, Y ;
Chyan, O ;
Wallace, RM ;
Kim, MJ ;
Hurd, TQ .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (08) :G154-G157
[6]   In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating [J].
Chang, Chih-Chieh ;
Pan, Fu-Ming .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (04) :G97-G102
[7]   Comparative Study of Cu Diffusion in Ru and Ru-C Films for Cu Metallization [J].
Chen, Chun-Wei ;
Jeng, Jiann-Shing ;
Chen, Jen-Sue .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (11) :H997-H1002
[8]   Cu films containing insoluble Ru and RuNX on barrierless Si for excellent property improvements [J].
Chu, J. P. ;
Lin, C. H. ;
John, V. S. .
APPLIED PHYSICS LETTERS, 2007, 91 (13)
[9]   Effects of dissolved nitrogen in improving barrier properties of ruthenium [J].
Damayanti, M ;
Sritharan, T ;
Mhaisalkar, SG ;
Gan, ZH .
APPLIED PHYSICS LETTERS, 2006, 88 (04) :1-3
[10]   Microstructural evolution of annealed ruthenium-nitrogen films [J].
Damayanti, M. ;
Sritharan, T. ;
Mhaisalkar, S. G. ;
Engelmann, H. J. ;
Zschech, E. ;
Vairagar, A. V. ;
Chan, L. .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (06) :P15-P17
1234