Thulium-doped vanadate crystals: Growth, spectroscopy and laser performance

被引：45

作者：

Ryba-Romanowski, Witold ^{[1
]}

Lisiecki, Radoslaw ^{[1
]}

Jelinkova, Helena ^{[2
]}

Sulc, Jan ^{[2
]}

机构：

[1] Polish Acad Sci, Inst Lou Temp & Struct Res, PL-50422 Wroclaw, Poland

[2] Czech Tech Univ, Fac Nucl Sci & Phys Engn, CR-11519 Prague, Czech Republic

来源：

PROGRESS IN QUANTUM ELECTRONICS | 2011年 / 35卷 / 05期

关键词：

Solid state lasers; Tm-doped vanadate crystals; 1.9 mu m-laser radiation; 1.9; MU-M; YVO4; SINGLE-CRYSTALS; TM-YVO4 MICROCHIP LASER; FLOATING-ZONE METHOD; RARE-EARTH IONS; CONTINUOUS-WAVE; ENERGY-TRANSFER; ROOM-TEMPERATURE; THERMAL-CONDUCTIVITY; ND-YVO4; CRYSTAL;

D O I：

10.1016/j.pquantelec.2011.06.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work is concentrated on growth, spectroscopy and laser performance of thulium-doped vanadate crystals. At the beginning the growth techniques are analyzed and then the matrix of vanadates crystal, its structure and physicochemical properties are explained together with the rare earth activators influence. Detailed spectroscopy of the thulium-doped vanadate crystals then follows. On the background of this theoretical analysis and state of the art of the subject the description of thulium vanadate lasers (especially Tm:YVO4, Tm:GdVO4, and Tm:LuVO4) together with their generated output radiation characteristics are presented. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：109 / 157

页数：49

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