Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers

被引：113

作者：

Park, G ^{[1
]}

Huffaker, DL ^{[1
]}

Zou, Z ^{[1
]}

Shchekin, OB ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 03期

基金：

美国国家科学基金会;

关键词：

laser measurements; lasers; quantum dots; semiconductor lasers; spontaneous emission;

D O I：

10.1109/68.748215

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented on the temperature dependence of 1.3-mu m wavelength quantum-dot (QD) lasers, A low-threshold current density of 90 A/cm(2) is achieved at room temperature using high reflectivity coatings, Despite the low-threshold current density, lasing at the higher temperatures is limited by nonradiative recombination with a rapid increase in threshold current occurring above similar to 225 K. Our results suggest that very low threshold current density (less than or equal to 20 A/cm(2)) can be achieved at room temperature from 1.3-mu m QD lasers, once nonradiative recombination is eliminated.

引用

页码：301 / 303

页数：3

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