Carrier quantization in SOI MOSFETs using an effective potential based Monte-Carlo tool

被引：13

作者：

Palestri, P ^{[1
]}

Esseni, D ^{[1
]}

Abramo, A ^{[1
]}

Clerc, R ^{[1
]}

Selmi, L ^{[1
]}

机构：

[1] DIEGM, I-33100 Udine, Italy

来源：

ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2003年

关键词：

D O I：

10.1109/ESSDERC.2003.1256900

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the numerical implementation and assesses the validity limits of the effective potential approach used to include quantum mechanical effects in semi-classical Full-Band Monte Carlo simulations. Results on thin-body fully-depleted SOI MOSFETs are reported. It is shown that the model grasps with reasonable accuracy the quantum mechanical reduction of the inversion charge, but fails to provide an accurate description of the charge distribution in proximity of the Si/SiO2 barrier.

引用

页码：407 / 410

页数：4

共 12 条

[1] QUANTUM CORRECTION TO THE EQUATION OF STATE OF AN ELECTRON-GAS IN A SEMICONDUCTOR [J].

ANCONA, MG ;

IAFRATE, GJ .

PHYSICAL REVIEW B, 1989, 39 (13) :9536-9540

[2]

CLERC R, 2002, P EUR SOL STAT DEV R, P191

[3]

Esseni D, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P719, DOI 10.1109/IEDM.2002.1175939

[4] Quantum effects in MOSFETs: Use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices [J].

Ferry, DK ;

Akis, R ;

Vasileska, D .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :287-290

[5]

*INT SYST ENG, 2002, DESSISISE REL 8 0

[6]

LAUX SE, 1995, PARTICLE MESH COUPLI

[7] Coupled Monte Carlo simulation of Si and SiO2 transport in MOS capacitors [J].

Palestri, P ;

Selmi, L ;

Pavesi, M ;

Widdershoven, F ;

Sangiorgi, E .

2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2000, :38-41

[8]

Palestri P., 2000, P EUR SOL STAT DEV R, P296

[9]

SANTO N, 2002, IEEE T NANOTECHNOL, V1, P63

[10] A full-band Monte Carlo model for silicon nanoscale devices with a quantum mechanical correction of the potential [J].

Tsuchiya, H ;

Fischer, B ;

Hess, K .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :283-286

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