Dry air effects on the copper oxides sensitive layers formation for ethanol vapor detection

被引：15

作者：

Labidi, A. ^{[1
]}

Bejaoui, A. ^{[1
]}

Ouali, H. ^{[1
]}

Akkari, F. Chaffar ^{[2
]}

Hajjaji, A. ^{[3
]}

Gaidi, M. ^{[3
]}

Kanzari, M. ^{[2
]}

Bessais, B. ^{[3
]}

Maaref, M. ^{[1
]}

机构：

[1] Univ Carthage, URPSC UR 99 13 18, IPEST, Tunis 2070, Tunisia

[2] Univ Tunis El Manar, Lab Photovolta & Mat Semicond, ENIT, Tunis 1002, Tunisia

[3] Technopole Borj Cedria, Lab Photovolta, Ctr Rech & Technol Energie, Hammam Lif 2050, Tunisia

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 23期

关键词：

Dry air; Copper oxides; XRD investigations; DC conductivity; Ethanol sensor; CUO NANOWIRES; SENSING CHARACTERISTICS; IMPEDANCE SPECTROSCOPY; EVAPORATION METHOD; THIN-FILMS; SENSORS; CU2O; DEPENDENCE; PRECURSOR; CO;

D O I：

10.1016/j.apsusc.2011.06.112

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The copper oxide films have been deposited by thermal evaporation and annealed under ambient air and dry air respectively, at different temperatures. The structural characteristics of the films were investigated by X-ray diffraction. They showed the presences of two hydroxy-carbonate minerals of copper for annealing temperatures below 250 degrees C. Above this temperature the conductivity measurements during the annealing process, show a transition phase from metallic copper to copper oxides. The copper oxides sensitivity toward ethanol were performed using conductivity measurements at the working temperature of 200 degrees C. A decrease of conductivity was observed under ethanol vapor, showing the p-type semi-conducting characters of obtained copper oxide films. It was found that the sensing properties of copper oxide toward ethanol depend mainly on the annealing conditions. The best responses were obtained with copper layers annealed under dry air. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：9941 / 9945

页数：5

共 29 条

[11] Preparation of large-scale cupric oxide nanowires by thermal evaporation method [J].