Investigation of the electrical properties of Ag/n-Si schottky diode obtained by two different methods

In present study, Ag/n-Si Schottky diodes were produced by vacuum evaporation method at two different substrate temperatures (200 K and 300 K) and structural, optical, electrical properties were investigated. X-ray diffraction studies showed that the textures of the Ag films are cubic with a strong (111) preferred direction. Field emission scanning electron microscopy (FESEM) images revealed that the Ag layer coated at 200 K substrate temperature consisted of nano clusters of equal size (12-15 nm) and the Ag layer consisted of islets of different sizes (80-100 nm) at 300 K substrate temperature. The ideal factor (n), barrier height (phi(B)), saturation current (I-0) and series resistance (R-S) for Schottky diodes 200 K and 300 K substrate temperature produced, obtained by using I-V measurements respectively 1.11, 0.85 eV, 0.0014 eta A, 3.45 K Omega and 3.68, 0.78 eV, 0.05 eta A, 5.51 K Omega. Donor density (N-D) and flat band potential (E-FB) for Schottky diodes 200 K and 300 K substrate temperature produced, obtained by using C-V measurements respectively 1.1 x 10(15) cm(-3), 0.52 V and 1.4 x 10(16) cm(-3), 0.34 V. When the characteristic properties of Schottky diodes are examined, it is understood that the differences depending on the method are caused by the distribution of homogeneous and equal sized nano clusters on the Si surface of the Ag layer produced at 200 K substrate temperature.