Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

被引：7

作者：

Liu, JL ^{[1
]}

Cai, SJ ^{[1
]}

Jin, GL ^{[1
]}

Tang, YS ^{[1
]}

Wang, KL ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1999年 / 25卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

gas-source MBE; vapor-liquid-solid; growth mechanism; Si wires;

D O I：

10.1006/spmi.1998.0678

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Freestanding Si nano-wires were grown by gas source molecular beam epitaxy on Au/Si (100), (111), (110), and (113) substrates. The morphology of Si nano-wires is investigated using scanning electron microscopy. This method provides a possible way to fabricate silicon quantum wires. (C) 1999 Academic Press.

引用

页码：477 / 479

页数：3

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