Thin films of transition metal-containing molecule-based materials: A highlight on electrochemically processed systems

被引：24

作者：

Valade, L ^{[1
]}

de Caro, D ^{[1
]}

Basso-Bert, M ^{[1
]}

Malfant, I ^{[1
]}

Faulmann, C ^{[1
]}

de Bonneval, WG ^{[1
]}

Legros, JP ^{[1
]}

机构：

[1] CNRS, Chim Coordinat Lab, UPR8241 Mol & Mat, F-31077 Toulouse, France

来源：

COORDINATION CHEMISTRY REVIEWS | 2005年 / 249卷 / 17-18期

关键词：

transition metal; molecule-based material; electrodeposition; thin film; silicon;

D O I：

10.1016/j.ccr.2005.03.030

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Molecule-based materials show a large variety of physical properties such as conductivity, magnetism, optics, which render them attractive for a new generation of electronic devices. Electrochemical processing is one of the methods that may be applied to grow thin conductive films. Depending on the systems, the technique itself and the two-dimensional growth may afford new phases and/or similar or different properties from those observed on single crystals. Several examples of compounds carrying dithiolato-, polyoxo- or cyano-ligands are provided and the particular use of silicon wafers as substrates is considered. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：1986 / 1996

页数：11

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