Design of high-performance regioregular polythiophenes for organic thin-film transistors

被引:37
|
作者
Ong, BS [1 ]
Wu, YL [1 ]
Liu, P [1 ]
机构
[1] Xerox Res Ctr Canada Ltd, Mat Design & Integrat Lab, Mississauga, ON L5K 2L1, Canada
关键词
ambient stability; field-effect mobility; organic semiconductors; polythiophenes; PQT; thin-film transistors (TFTs);
D O I
10.1109/JPROC.2005.851486
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The performance of a regioregular polythiophene semiconductor for solution-processed organic thin-film transistors (OTFTs) is critically dependent on its ability to self-organize from solution and its stability against p-doping by oxygen. Structural features that promote lamellar ordering and delicately curtail the pi-conjugation of regioregular polythiophene system would enable achievement of high field-effect mobility in air. Molecular design principles and structure-property correlation studies that lead to the design of a solution-processed, all-round high-performance polythiophene semiconductor system (PQT)for OTFTs are discussed. Mobility to 0.14 cm(2) V-1 s(-1) and current on/off ratio of 107, together with other desirable thin-film transistor (TFT) properties have been obtained with this class of organic semiconductors in OTFTs under ambient fabrication conditions.
引用
收藏
页码:1412 / 1419
页数:8
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