Temperature-Dependent Coercive Field Measured by a Quantum Dot Strain Gauge

被引:9
作者
Chen, Yan [1 ]
Zhang, Yang [1 ]
Keil, Robert [1 ]
Zopf, Michael [1 ]
Ding, Fei [1 ,2 ]
Schmidt, Oliver G. [1 ,3 ]
机构
[1] IFW Dresden, Inst Integrat Nanosci, Helmholtzstr 20, D-01069 Dresden, Germany
[2] Leibniz Univ Hannover, Inst Festkorperphys, Appelstr 2, D-30167 Hannover, Germany
[3] Tech Univ Chemnitz, Reichenhainerstr 70, D-09107 Chemnitz, Germany
基金
欧洲研究理事会;
关键词
Coercive field; low temperature; piezoelectricity; quantum dot; strain gauge; PMN-PT; ENTANGLED PHOTONS; ACTUATORS; PZT;
D O I
10.1021/acs.nanolett.7b04138
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Coercive fields of piezoelectric materials can be strongly influenced by environmental temperature. We investigate this influence using a heterostructure consisting of a single crystal piezoelectric film and a quantum dots containing membrane. Applying electric field leads to a physical deformation of the piezoelectric film, thereby inducing strain in the quantum dots and thus modifying their optical properties. The wavelength of the quantum dot emission shows butterfly-like loops, from which the coercive fields are directly derived. The results suggest that coercive fields at cryogenic temperatures are strongly increased, yielding values several tens of times larger than those at room temperature. We adapt a theoretical model to fit the measured data with very high agreement. Our work provides an efficient framework for predicting the properties of ferroelectric materials and advocating their practical applications, especially at low temperatures.
引用
收藏
页码:7864 / 7868
页数:5
相关论文
共 45 条
[11]   Intrinsic ferroelectric coercive field [J].
Ducharme, S ;
Fridkin, VM ;
Bune, AV ;
Palto, SP ;
Blinov, LM ;
Petukhova, NN ;
Yudin, SG .
PHYSICAL REVIEW LETTERS, 2000, 84 (01) :175-178
[12]   General features of the intrinsic ferroelectric coercive field [J].
Fridkin, VM ;
Ducharme, S .
PHYSICS OF THE SOLID STATE, 2001, 43 (07) :1320-1324
[13]  
Ginzburg VL., 1945, TEOR FIZ, V15, P739
[14]   Influence of Ag on the microstructure and magnetic properties of perpendicular exchange coupled composite L10-[FePt-Ag]/[Co/Ni]N films [J].
Guo, H. H. ;
Chu, H. G. ;
Ma, B. ;
Zhang, Z. Z. ;
Jin, Q. Y. ;
Wang, H. ;
Wang, J. P. .
APPLIED PHYSICS LETTERS, 2013, 102 (25)
[15]   Electrical characterization of PMN-28%PT(001) crystals used as thin-film substrates [J].
Herklotz, Andreas ;
Plumhof, Johannes D. ;
Rastelli, Armando ;
Schmidt, Oliver G. ;
Schultz, Ludwig ;
Doerr, Kathrin .
JOURNAL OF APPLIED PHYSICS, 2010, 108 (09)
[16]   Polarization Switching without Domain Formation at the Intrinsic Coercive Field in Ultrathin Ferroelectric PbTiO3 [J].
Highland, Matthew J. ;
Fister, Timothy T. ;
Richard, Marie-Ingrid ;
Fong, Dillon D. ;
Fuoss, Paul H. ;
Thompson, Carol ;
Eastman, Jeffrey A. ;
Streiffer, Stephen K. ;
Stephenson, G. Brian .
PHYSICAL REVIEW LETTERS, 2010, 105 (16)
[17]   High-density magnetoresistive random access memory operating at ultralow voltage at room temperature [J].
Hu, Jia-Mian ;
Li, Zheng ;
Chen, Long-Qing ;
Nan, Ce-Wen .
NATURE COMMUNICATIONS, 2011, 2
[18]  
Jiang XN, 2006, AIP CONF PROC, V823, P1783
[19]   Nonlinear Dynamics of Domain-Wall Propagation in Epitaxial Ferroelectric Thin Films [J].
Jo, J. Y. ;
Yang, S. M. ;
Kim, T. H. ;
Lee, H. N. ;
Yoon, J. -G. ;
Park, S. ;
Jo, Y. ;
Jung, M. H. ;
Noh, T. W. .
PHYSICAL REVIEW LETTERS, 2009, 102 (04)
[20]   Universal domain wall dynamics in disordered ferroic materials [J].
Kleemann, W. .
ANNUAL REVIEW OF MATERIALS RESEARCH, 2007, 37 :415-448