InGaAsP/GaInP/AlGaInP 0.8 μm QW lasers grown by MOCVD using TBP and TBAs

被引：3
|
作者：
Dong, JR [1 ]
Teng, JH [1 ]
Chua, SJ [1 ]
Wang, YJ [1 ]
Foo, BC [1 ]
Yin, R [1 ]
机构：
[1] Inst Mat Res & Engn, Singapore 117602, Singapore
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 281卷 / 2-4期
关键词：
MOCVD; InGaAsP/AlGaInP quantum well; TBP and TBAs; laser diode;
D O I：
10.1016/j.jcrysgro.2005.04.060
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
InGaAsP epilayers and TnGaAsP/GaInP single quantum well (SQW) structures have been grown by metalorganic chemical vapor deposition (MOCVD) on GaAs substrates using tertiarybutylphosphine (TBP) and tertiarybutylarsme (TBAs) as group V sources. Both InGaAsP epilayers and InGaAsP/GaInP SQW structure show strong photoluminescence emission, suggesting good optical quality. Finally, ridge waveguide InGaAsP/GaInP/A1GaInP QW lasers have been demonstrated with an emission wavelength around 0.8 mu m and a threshold current of 24 mA under continuous wave operation at room temperature, indicating TBP and TBAs are as good as PH3 and AsH3 for the growth of high-power 0.8 pm lasers. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：323 / 327
页数：5
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