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Single- and double-electron transfer in low- and intermediate-energy C4+ + He collisions
被引:35
|作者:
Gao, J. W.
[1
,2
]
Wu, Y.
[1
]
Sisourat, N.
[2
]
Wang, J. G.
[1
]
Dubois, A.
[2
]
机构:
[1] Inst Appl Phys & Computat Math, Beijing 100088, Peoples R China
[2] Sorbonne Univ, UPMC Univ Paris 06, CNRS, Lab Chim Phys Matiere & Rayonnement, F-75005 Paris, France
基金:
中国国家自然科学基金;
关键词:
CROSS-SECTIONS;
CHARGE-TRANSFER;
COLLISIONS;
CAPTURE;
IONS;
HE;
HELIUM;
C-4+;
D O I:
10.1103/PhysRevA.96.052703
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
The electron-capture processes in C4+ + He collisions have been studied theoretically using a two-active- electron semi-classical atomic-orbital close-coupling method in a wide energy domain. The results of the present calculations are compared with available theoretical predictions and experimental measurements: very good agreements are found for both total and state-selective single-electron-capture (SEC) and double-electron-capture (DEC) cross sections. We extend the understanding on that system to high energies for which only a single series of data exists. Furthermore, the mechanisms responsible for SEC and DEC processes have been investigated by additional restricted two-active-electron and single-active-electron calculations. The role of electronic correlations in the collisions is also discussed.
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页数:7
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