Single- and double-electron transfer in low- and intermediate-energy C4+ + He collisions

被引:35
|
作者
Gao, J. W. [1 ,2 ]
Wu, Y. [1 ]
Sisourat, N. [2 ]
Wang, J. G. [1 ]
Dubois, A. [2 ]
机构
[1] Inst Appl Phys & Computat Math, Beijing 100088, Peoples R China
[2] Sorbonne Univ, UPMC Univ Paris 06, CNRS, Lab Chim Phys Matiere & Rayonnement, F-75005 Paris, France
基金
中国国家自然科学基金;
关键词
CROSS-SECTIONS; CHARGE-TRANSFER; COLLISIONS; CAPTURE; IONS; HE; HELIUM; C-4+;
D O I
10.1103/PhysRevA.96.052703
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The electron-capture processes in C4+ + He collisions have been studied theoretically using a two-active- electron semi-classical atomic-orbital close-coupling method in a wide energy domain. The results of the present calculations are compared with available theoretical predictions and experimental measurements: very good agreements are found for both total and state-selective single-electron-capture (SEC) and double-electron-capture (DEC) cross sections. We extend the understanding on that system to high energies for which only a single series of data exists. Furthermore, the mechanisms responsible for SEC and DEC processes have been investigated by additional restricted two-active-electron and single-active-electron calculations. The role of electronic correlations in the collisions is also discussed.
引用
收藏
页数:7
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