Charge transport in high-performance ink-jet printed single-droplet organic transistors based on a silylethynyl substituted pentacene/insulating polymer blend

被引：63

作者：

Li, Xiaoran ^{[1
,2
]}

Smaal, Wiljan T. T. ^{[1
]}

Kjellander, Charlotte ^{[1
]}

van der Putten, Bas ^{[1
]}

Gualandris, Kevin ^{[1
]}

Smits, Edsger C. P. ^{[1
]}

Anthony, John ^{[3
]}

Broer, Dirk J. ^{[2
]}

Blom, Paul W. M. ^{[1
]}

Genoe, Jan ^{[4
]}

Gelinck, Gerwin ^{[1
]}

机构：

[1] TNO, Holst Ctr, NL-5656 AE Eindhoven, Netherlands

[2] Eindhoven Univ Technol, Dept Chem & Chem Engn, NL-5600 MB Eindhoven, Netherlands

[3] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA

[4] IMEC VZW, Dept Large Area Elect, B-3001 Louvain, Belgium

来源：

ORGANIC ELECTRONICS | 2011年 / 12卷 / 08期

关键词：

Blend; Organic transistor; Substituted pentacene; Single-droplet ink-jet printing; Contact barrier; FIELD-EFFECT TRANSISTORS; PENTACENE; POTENTIALS;

D O I：

10.1016/j.orgel.2011.04.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a systematic study of the influence of material composition and ink-jet processing conditions on the charge transport in bottom-gate field-effect transistors based on blends of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and polystyrene. After careful process optimizations of blending ratio and printing temperature we routinely can make transistors with an average mobility of 1 cm(2)/Vs (maximum value 1.5 cm(2)/Vs), on/off ratio exceeding 10(7), and sharp turn-on in current (sub-threshold slopes approaching 60 mV/decade). These characteristics are superior to the TIPS-PEN only transistors. Using channel scaling measurements and scanning Kelvin probe microscopy, the sharp turn-on in current in the blends is attributed to a contact resistance that originates from a thin insulating layer between the injecting contacts and the semiconductor channel. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1319 / 1327

页数：9