Luminance enhancement of flip-chip light-emitting diodes by geometric sapphire shaping structure

被引：24

作者：

Lee, C. E. ^{[1
,2
]}

Kuo, H. C. ^{[1
,2
]}

Lee, Y. C. ^{[1
,2
]}

Tsai, M. R. ^{[1
,2
]}

Lu, T. C. ^{[1
,2
]}

Wang, S. C. ^{[1
,2
]}

Kuo, C. T. ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] Inst Technol Res Inst, Opt Elect Labs, Hsinchu, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 1-4期

关键词：

flip-chip light-emitting diodes (FC-LEDs); geometric sapphire shaping; oblique sidewall; sapphire wet etching;

D O I：

10.1109/LPT.2007.912990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The flip-chip light-emitting diodes (FC-LEDs) with geometric sapphire shaping structure were investigated. The sapphire shaping structure was formed on the. bottom side of the sapphire substrate by a chemical wet etching technique for light extraction purpose. The crystallography-etched facets were (1010) M-plane, (1102) R-plane, and (1120) A-plane against the (0001) c-axis with the angles range between 29 degrees similar to 60 degrees. These large slope oblique sidewalls are useful for light extraction efficiency enhancement. The light-output power of sapphire shaping FC-LEDs was increased 55% (at 350-mA current injection) compared to that of conventional FC-LEDs.

引用

页码：184 / 186

页数：3

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