Phonon transport in suspended silicon nitride membranes at low temperatures

被引：1

作者：

Karvonen, J. T. ^{[1
]}

Kuhn, T. ^{[1
]}

Maasilta, I. J. ^{[1
]}

机构：

[1] Univ Jyvaskyla, Dept Phys, Nanosci Ctr, FIN-40014 Jyvaskyla, Finland

来源：

25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 1: CRYOGENIC TECHNOLOGIES AND APPLICATIONS | 2009年 / 150卷

关键词：

D O I：

10.1088/1742-6596/150/1/012019

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

We have studied experimentally the nature of phonon transport in 750 nm and 200 nm thick free-standing silicon nitride (SiN(x)) membranes over a temperature range of 0.1-1K. Measurements were performed by using a radially symmetric DC heater and several normal metal-insulator-superconductor (NIS) tunnel junction thermometers to detect the phonon temperature T(p) at several different distances from the heater. Our data indicates that phonon transport is three dimensional in both membranes, and mostly ballistic at the low temperature range of our experiment. At temperatures above 0.5 K there are indications of a transition to a more diffusive regime.

引用

页数：4

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