Structural controlled magnetic anisotropy in Heusler L10-MnGa epitaxial thin films

被引:46
作者
Wang, Kangkang [1 ]
Lu, Erdong [1 ]
Knepper, Jacob W. [2 ]
Yang, Fengyuan [2 ]
Smith, Arthur R. [1 ]
机构
[1] Ohio Univ, Dept Phys & Astron, Nanoscale & Quantum Phenomena Inst, Athens, OH 45701 USA
[2] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA
基金
美国国家科学基金会;
关键词
PERPENDICULAR-ANISOTROPY;
D O I
10.1063/1.3582244
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferromagnetic L1(0)-MnGa thin films have been epitaxially grown on GaN, sapphire, and MgO substrates using molecular beam epitaxy. Using diffraction techniques, the epitaxial relationships are determined. It is found that the crystalline orientation of the films differ due to the influence of the substrate. By comparing the magnetic anisotropy to the structural properties, a clear correlation could be established indicating that the in-plane and out-of-plane anisotropy is directly determined by the crystal orientation of the film and could be controlled via selection of the substrates. This result could be helpful in tailoring magnetic anisotropy in thin films for spintronic applications. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3582244]
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页数:3
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