1/f noise in SiGeHBTs fabricated on CMOS-Compatible thin-film SOI

被引：0

作者：

Bellini, Marco ^{[1
]}

Cheng, Peng ^{[1
]}

Appaswamy, Aravind ^{[1
]}

Cressler, John D. ^{[1
]}

Cai, Jin ^{[2
]}

机构：

[1] Northwest Georgia Tech, Sch Elect & Comp Engn, 777 Atlantic Dr, Atlanta, GA 30332 USA

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

NOISE AND FLUCTUATIONS IN CIRCUITS, DEVICES, AND MATERIALS | 2007年 / 6600卷

关键词：

low frequency noise; IN noise; SiGeHBT; SOI; SiGeHBT-on-SOI; folded collector structure;

D O I：

10.1117/12.724678

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report, for the first time, the low frequency noise characteristics of both fully- and partially-depleted SiGe HBTs-on-SOI, both in forward and inverse modes of operation. These SiGe HBTs on thin-film SOI are then compared with bulk SiGe HBTs in order to evaluate how the fundamentally different device structure affects IN noise performance. In addition, the impact of substrate voltage, collector doping, and temperature on low-frequency noise is investigated.

引用

页数：9

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