Novel Germanium n-MOSFETs With Raised Source/Drain on Selectively Grown Ge on Si for Monolithic Integration

被引：11

作者：

Yu, Hyun-Yong ^{[1
]}

Kobayashi, Masaharu ^{[1
]}

Park, Jin-Hong ^{[2
]}

Nishi, Yoshio ^{[1
]}

Saraswat, Krishna C. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Kyung Hee Univ, Dept Elect & Radio Engn, Coll Elect & Informat, Yongin 446701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 04期

关键词：

Germanium; heteroepitaxy; in situ; MOSFET; raised; selective;

D O I：

10.1109/LED.2011.2106756

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate novel Ge n-MOSFETs with raised source/drain (S/D) fabricated on high-quality single-crystal Ge selectively grown heteroepitaxially on Si. For the raised S/D, an implant-free in situ doping technique has been employed for low-resistance, abrupt, and shallow n(+)/p junctions. The novel n-MOSFETs show an excellent on/off ratio (4 x 10(3)) with very high on current (3.23 mu A/mu m) and relatively high electron mobility on (100) Ge among the Ge n-MOSFETs. These results show promise toward monolithic integration of Ge MOSFETs with a Si VLSI platform.

引用

页码：446 / 448

页数：3

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