Spectroscopic evidence of in-gap states at the SrTiO3/LaAlO3 ultrathin interfaces

被引:44
作者
Drera, G. [1 ]
Banfi, F. [1 ]
Canova, F. Federici [1 ]
Borghetti, P. [1 ]
Sangaletti, L. [1 ]
Bondino, F. [2 ]
Magnano, E. [2 ]
Huijben, J. [3 ,4 ]
Huijben, M. [3 ,4 ]
Rijnders, G. [3 ,4 ]
Blank, D. H. A. [3 ,4 ]
Hilgenkamp, H. [3 ,4 ]
Brinkman, A. [3 ,4 ]
机构
[1] Univ Cattolica, Dipartimento Matemat & Fis, I-25121 Brescia, Italy
[2] IOM CNR, Lab TASC, I-34149 Basovizza, Italy
[3] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands
[4] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
关键词
HETEROSTRUCTURES;
D O I
10.1063/1.3549177
中图分类号
O59 [应用物理学];
学科分类号
摘要
Experimental evidence of differences in the electronic properties of an insulating and a conducting SrTiO3/LaAlO3 interface is provided by soft x-ray spectroscopies. While core level photoemission measurements show that only at the conducting interface Ti ions with 3+ ionization state are present, by using resonant photoemission and x-ray absorption spectroscopies, it is shown that in both samples in-gap states with a Ti 3d character are present, but their density is higher at the conducting interface. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549177]
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页数:3
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