Crystal structure and photoluminescence properties of (Y1-xCex)4Si2O7N2

被引:20
作者
Lu, F. C. [1 ]
Song, X. P. [1 ]
Liu, Q. L. [1 ]
机构
[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China
基金
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词
Y4Si2O7N2; Crystal structure; Ce3+ doped; Photoluminescence; LUMINESCENCE PROPERTIES; PHOSPHOR; LEDS;
D O I
10.1016/j.optmat.2010.08.011
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Oxonitridosilicate compounds with compositions of (Y1-xCex)(4)Si2O7N2 (x = 0-0.1) compounds have been synthesized. The relations of structure, photoluminescence properties and Ce content have been studied. These compounds have a broad band excitation covering from 350 to 450 nm and a broad band emission covering from 450 to 575 nm. There exist four different types of photoluminescence centers, which correspond to four different crystallographic sites accommodating the Ce3+ dopants in the lattice. The energy transfer among Ce3+ ions in different sites enhance with the increasing Ce content, leading to red-shift of the emission peaks and concentration quenching. The relationship between crystallographic sites of Ce3+ ions and luminescence properties is established. (Y1-xCex)(4)Si2O7N2 is a promising phosphor for use in white light-emitting diodes. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:91 / 98
页数:8
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