A high performance plasma display panel driver IC using SOI

被引：21

作者：

Sumida, H ^{[1
]}

Hirabayashi, A ^{[1
]}

Shimabukuro, H ^{[1
]}

Takazawa, Y ^{[1
]}

Shigeta, Y ^{[1
]}

机构：

[1] Fuji Elect Co Ltd, Matsumoto, Nagano 3900821, Japan

来源：

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 1998年

关键词：

D O I：

10.1109/ISPSD.1998.702654

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we demonstrate an advanced 200V-class plasma display panel scan driver IC using dielectric isolation, that utilizes bonded SOI and trench isolation, and a lateral IGBT (LIGBT). We have accomplished a large reduction in chip size compared with the IC fabricated on a junction isolated wafer and have obtained good output characteristics by optimizing device parameters. Moreover, original techniques to improve the blocking capability of the integrated LIGBT and lateral p-channel MOSFET have been included in our fabricated IC and are also described in this papaer.

引用

页码：137 / 140

页数：4