The relaxation of the neutral state of manganese in gallium arsenide

被引：4
|
作者：
Masterov, VF [1 ]
Shtel'makh, KF [1 ]
Maslov, VP [1 ]
Mikhrin, SB [1 ]
Samorukov, BE [1 ]
机构：
[1] St Petersburg State Tech Univ, St Petersburg 195251, Russia
来源：
SEMICONDUCTORS | 2003年 / 37卷 / 08期
关键词：
D O I：
10.1134/1.1601658
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Results of investigations of the longitudinal magnetic relaxation of the neutral state of the Mn-0 center in GaAs are presented. Relaxation mechanisms were determined from the broadening of the electron-spin-resonance line in the temperature range of 3.4-8.2 K and from the variation in the nuclear relaxation rate in the range of 36-310 K. The nuclear relaxation investigation demonstrates that the electron relaxation is governed by the interaction between lattice vibrations and local vibrations of the center. This allows one to represent the electron relaxation at low temperatures as the consequence of anharmonicity of local vibrations of the electron dipole moment of the Mn-0 center. (C) 2003 MAIK "Nauka / Interperiodica".
引用
收藏
页码：918 / 922
页数：5
相关论文
共 50 条
  • [1] The relaxation of the neutral state of manganese in gallium arsenide
    V. F. Masterov
    K. F. Shtel’makh
    V. P. Maslov
    S. B. Mikhrin
    B. E. Samorukov
    Semiconductors, 2003, 37 : 918 - 922
  • [2] PHOTOEXCITATION AND PHOTOIONIZATION OF NEUTRAL MANGANESE ACCEPTORS IN GALLIUM ARSENIDE
    CHAPMAN, RA
    HUTCHINSON, WG
    PHYSICAL REVIEW LETTERS, 1967, 18 (12) : 443 - +
  • [3] ELECTRONIC-STRUCTURE OF THE NEUTRAL MANGANESE ACCEPTOR IN GALLIUM-ARSENIDE
    SCHNEIDER, J
    KAUFMANN, U
    WILKENING, W
    BAEUMLER, M
    KOHL, F
    PHYSICAL REVIEW LETTERS, 1987, 59 (02) : 240 - 243
  • [4] DIFFUSION OF MANGANESE INTO GALLIUM ARSENIDE
    SELTZER, MS
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) : 243 - &
  • [5] INVESTIGATION OF THE NEUTRAL STATE OF COBALT IMPURITIES IN GALLIUM ARSENIDE.
    Andrianov, D.G.
    Savel'ev, A.S.
    Suchkova, N.I.
    Rashevskaya, E.P.
    Filippov, M.A.
    1977, 11 (08): : 858 - 860
  • [6] INVESTIGATION OF NEUTRAL STATE OF COBALT IMPURITIES IN GALLIUM-ARSENIDE
    ANDRIANOV, DG
    SAVELEV, AS
    SUCHKOVA, NI
    RASHEVSKAYA, EP
    FILIPPOV, MA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08): : 858 - 860
  • [7] NEUTRAL STATE OF DEEP CUGA ACCEPTORS IN GALLIUM-ARSENIDE
    AVERKIEV, NS
    VETROV, VA
    GUTKIN, AA
    MERKULOV, IA
    NIKITIN, LP
    RESHINA, II
    ROMANOV, NG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (09): : 1014 - 1017
  • [8] ELECTRON PARAMAGNETIC RESONANCE OF MANGANESE IN GALLIUM ARSENIDE
    ALMELEH, N
    GOLDSTEIN, B
    PHYSICAL REVIEW, 1962, 128 (04): : 1568 - +
  • [9] PARAMAGNETISM OF THE MANGANESE ACCEPTOR IN GALLIUM-ARSENIDE
    FREY, T
    MAIER, M
    SCHNEIDER, J
    GEHRKE, M
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (32): : 5539 - 5545
  • [10] ESR of interacting manganese centers in gallium arsenide
    K. F. Shtel’makh
    M. P. Korobkov
    I. G. Ozerov
    Semiconductors, 2003, 37 : 872 - 875
12345