Investigation of magneto-electric effects in (PMN-PT) @ NiFe2O4 core shell nanostructures and nanocomposites for non volatile memory applications

被引:7
作者
Ahlawat, Anju [1 ]
Khan, Azam Ali [1 ,2 ]
Desmukh, Pratik [1 ,2 ]
Shirolkar, Mandar M. [3 ,4 ]
Li, Jieni [4 ]
Wang, Haiqian [4 ]
Satapathy, S. [1 ,2 ]
Karnal, A. K. [1 ,2 ]
机构
[1] Raja Ramanna Ctr Adv Technol, Laser & Funct Mat Div, Indore 452013, Madhya Pradesh, India
[2] Homi Bhabha Natl Inst, Training Sch Complex, Mumbai 400094, Maharashtra, India
[3] SIU, SCNN, Symbiosis Int, Pune 412115, Maharashtra, India
[4] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
关键词
NiFe2O4; PMN-PT; Core shell; Nanocomposites; Magnetoelectric response;
D O I
10.1016/j.matlet.2019.127082
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We studied structural, ferroelectric, magnetic and magneto-electric (ME) properties of (0.65Pb (Mg1/3Nb2/3)O-3-0.35PbTiO(3)) (PMN-PT)/NiFe2O4 nanocomposite and core shell nanostructures (with ferrimagnetic NiFe2O4 core and ferroelectric PMN-PT shell). Morphology of core shell nanostructures and nanocomposites have been analyzed using transmission electron microscopy and scanning electron microscopy. Both the (PMN-PT)/NiFe2O4 samples reveal magneto electric effect at room temperature. The ME coupling coefficient (alpha) was found to be two order of magnitude higher for (PMN-PT)/NiF2O4 nanocomposites in comparison to the core shell nanostructures. The PMN-PT/NiFe2O4 nano composite showed repeatable and reversible switching of alpha (alpha > 0 and alpha < 0) in response to the applied positive and negative electric-pulses E = 20 kV/cm. The response of alpha was recorded for eighteen cycles of electric pulses (single pulse duration = 100 s). The binary information can be stored in two states of alpha (alpha > 0 and alpha < 0) in non volatile manner. The PMN-PT/NiFe2O4 nanocomposite exhibited retention of alpha for similar to 104 s and hence it can be used for non volatile memory applications. The principle of using a for memory storage may offer numerous benefits such as low power consumption, avoid destructive reading process, and easy writing/reading process. (C) 2019 Elsevier B.V. All rights reserved.
引用
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页数:4
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