Investigation of the carrier density dependence on the confinement factor in a bulk semiconductor optical amplifier with a ridge waveguide

被引:4
作者
Alvarez, E [1 ]
Soto, H [1 ]
Torres, J [1 ]
机构
[1] CICESE, Res Ctr, Div Appl Phys, Ensenada 22860, Baja California, Mexico
关键词
bulk semiconductor optical amplifiers; confinement factor; optical propagation in non-linear media; optical waveguides;
D O I
10.1016/S0030-4018(03)01543-8
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this work we demonstrate that the confinement factor value can strongly depend on the carrier density in long bulk semiconductor optical amplifiers with a ridge waveguide (RW-SOAs). Theoretically we shown that a 1.5 dBm input beam increases the confinement factor in such a manner that the investigated 1.5 mm length RW-SOA allows an acceptable guiding of a frequently neglected TE01 mode. In order to avoid heavy calculations, a simple expression relating the confinement factor with the carrier density is derived from theoretical results obtained from a rigorous analysis. Finally, an experimental method allowing a qualitative visualization of the confinement factor modification provoked by an input power fluctuation and therefore by a carrier density variation, is presented. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:161 / 167
页数:7
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