Oxygen plasma assisted high performance solution-processed Al2Ox gate insulator for combustion-processed InGaZnOx thin film transistors

被引：23

作者：

Wang, Han ^{[1
,2
]}

Xu, Wangying ^{[1
,2
]}

Zhou, Shuang ^{[1
,2
]}

Xie, Fangyan ^{[3
]}

Xiao, Yubin ^{[1
,2
]}

Ye, Lei ^{[1
,2
]}

Chen, Jian ^{[3
]}

Xu, Jianbin ^{[1
,2
]}

机构：

[1] Chinese Univ Hong Kong, Dept Elect Engn & Mat Sci, Shatin, Hong Kong, Peoples R China

[2] Chinese Univ Hong Kong, Technol Res Ctr, Shatin, Hong Kong, Peoples R China

[3] Sun Yat Sen Zhongshan Univ, Instrumental Anal & Res Ctr, Guangzhou, Guangdong, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 03期

基金：

美国国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; LOW-TEMPERATURE; METAL-OXIDE; SOL-GEL; DIELECTRICS; FABRICATION; CONDUCTION; ELECTRONICS; SURFACE;

D O I：

10.1063/1.4906107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of oxygen-plasma treatment on solution-processed Al2Ox gate dielectrics for InGaZnOx (IGZO) thin film transistors (TFTs) are investigated in this paper. Thin films of amorphous Al2Ox are successfully fabricated by annealing temperature of 300 degrees C. Utilizing oxygen-plasma treated gate dielectrics, combustion-processed IGZO TFTs, which are annealed at a temperature of 300 degrees C, show a mobility of 7.3 cm(2) V-1 s(-1), a threshold voltage of -0.3 V, an on-off current ratio of 1 x 10(5), a subthreshold swing of 160 mV/decade, when operating with a voltage ranging from -2 V to +5 V. Our experimental results demonstrate that oxygen-plasma treatment can remarkably improve dielectric performance. This is presumably due to the passivation of interfacial and bulk traps, and the reduced concentration of oxygen vacancies. (C) 2015 AIP Publishing LLC.

引用

页数：9

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