Suppression of defect related host luminescence in LuAG single crystals

被引：19

作者：

Ogino, Hiraku ^{[1
]}

Yoshikawa, Akira ^{[2
]}

Nikl, Martin ^{[3
]}

Kucerkova, Romana ^{[3
]}

Shimoyama, Jun-ichi ^{[1
]}

Kishio, Kohji ^{[1
]}

机构：

[1] Univ Tokyo, Sch Engn, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan

[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 980, Japan

[3] AS CR, Inst Phys, Prague 16253, Czech Republic

来源：

2008 INTERNATIONAL CONFERENCE ON LUMINESCENCE AND OPTICAL SPECTROSCOPY OF CONDENSED MATTER | 2009年 / 2卷 / 02期

关键词：

Characterization; Growth from melt; Oxides; Scintillator materials; SCINTILLATOR; GROWTH; YAG; CE; ND;

D O I：

10.1016/j.phpro.2009.07.011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

To study suppression of the unwanted host luminescence in aluminum garnet crystals, effect of Ga substitution in both undoped and Eu doped Lu3Al5O12 single crystal was examined at the crystals grown by the micro-pulling down(mu-PD) method. Optical properties such as excitation spectra, radioluminescence spectra and photoluminescence decay are presented. In the GA-admixed crystal strong suppression of host luminescence due to an exciton localized around the Lu-Al antisite defect was observed even at the Ga concentration of 10mol%. Ga substitution also modify the charge transfer excitation band in the Eu doped LuGAG and change the decay time in the Eu3+ red emission lines.

引用

页码：191 / 205

页数：15

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