Venting temperature determines surface chemistry of magnetron sputtered TiN films

被引:105
|
作者
Greczynski, G. [1 ,2 ]
Mraz, S. [2 ]
Hultman, L. [1 ]
Schneider, J. M. [2 ]
机构
[1] Linkoping Univ, Dept Phys IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden
[2] Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany
关键词
PHOTOELECTRON-SPECTROSCOPY; DIFFUSION-BARRIERS; TITANIUM NITRIDE; ION-BOMBARDMENT; OXIDATION; XPS; COATINGS; SPECTRA; MICROSTRUCTURE; EVOLUTION;
D O I
10.1063/1.4940974
中图分类号
O59 [应用物理学];
学科分类号
摘要
Surface properties of refractory ceramic transition metal nitride thin films grown by magnetron sputtering are essential for resistance towards oxidation necessary in all modern applications. Here, typically neglected factors, including exposure to residual process gases following the growth and the venting temperature T-v, each affecting the surface chemistry, are addressed. It is demonstrated for the TiN model materials system that T-v has a substantial effect on the composition and thickness-evolution of the reacted surface layer and should therefore be reported. The phenomena are also shown to have impact on the reliable surface characterization by x-ray photoelectron spectroscopy. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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页数:5
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