High-performance, sub-2 volts TiO2 thin film transistors enabled by ultrathin ZrO2 gate dielectrics

被引：0

作者：

Zhang, Jie ^{[1
]}

Cui, Peng ^{[1
]}

Lin, Guangyang ^{[1
]}

Zeng, Yuping ^{[1
]}

机构：

[1] Univ Delaware, 139 Green, Newark, DE 19716 USA

来源：

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年

关键词：

Thin film transistor; TiO2; High-k dielectric ZrO2; Sub-2; volts;

D O I：

10.1109/EDTM50988.2021.9420897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on, for the first time, high-performance, sub-2 volts TiO2 thin film transistors (TFTs) enabled by ultrathin ZrO2 gate dielectrics. The effect of ZrO2 thickness on TFT performance is systematically studied. It is found that the TFT performances are enhanced with the reduced ZrO2 thickness, benefiting from the increased gate oxide capacitance (C-ox). The TiO2 TFTs with an ultrathin ZrO2 dielectric of 5 nm show a high I-on/I-off of 7.7x 10(7) and a nearly ideal SS of 72 mV under an ultra-low voltage of 2 V. The high-performance, sub-2 volts TiO2 TFTs show great promise for future portable electronic applications.

引用

页数：3

共 5 条

[1] One-Volt IGZO Thin-Film Transistors With Ultra-Thin, Solution-Processed AlxOy Gate Dielectric [J].