Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks

被引：89

作者：

Chernikova, A. G. ^{[1
]}

Kuzmichev, D. S. ^{[1
]}

Negrov, D. V. ^{[1
]}

Kozodaev, M. G. ^{[1
]}

Polyakov, S. N. ^{[2
]}

Markeev, A. M. ^{[1
]}

机构：

[1] Moscow Inst Phys & Technol, Inst Skii Per 9, Dolgoprudnyi 141700, Moscow Region, Russia

[2] Technol Inst Superhard & Novel Carbon Mat, Tsentralnaya Str 7a, Moscow 142190, Russia

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 24期

基金：

俄罗斯科学基金会;

关键词：

THIN-FILMS; BEHAVIOR; TIN;

D O I：

10.1063/1.4953787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the possibility of employment of low temperature (<= 330 degrees C) plasma-enhanced atomic layer deposition for the formation of both electrodes and hafnium-oxide based ferroelectric in the metal-insulator-metal structures. The structural and ferroelectric properties of La doped HfO2-based layers and its evolution with the change of both La content (2.1, 3.7 and 5.8 at. %) and the temperature of the rapid thermal processing (550-750 degrees C) were investigated in detail. Ferroelectric properties emerged only for 2.1 and 3.7 at.% of La due to the structural changes caused by the given doping levels. Ferroelectric properties were also found to depend strongly on annealing temperature, with the most robust ferroelectric response for lowest La concentration and intermediate 650 degrees C annealing temperature. The long term wake-up effect and such promising endurance characteristics as 3 x 10(8) switches by bipolar voltage cycles with 30 mu s duration and +/- 3 MV/cm amplitude without any decrease of remnant polarization value were demonstrated. Published by AIP Publishing.

引用

页数：4

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