Sensitivity assessment of nanoscale double gate MOSFET based biosensor using numerical simulation

被引：1

作者：

Gokuraju, Thriveni ^{[1
]}

Ghosh, Kaustab ^{[1
,2
]}

机构：

[1] Vellore Inst Technol, Sch Elect Engn SENSE, Chennai, Tamil Nadu, India

[2] Vellore Inst Technol, Ctr Nanoelect & VLSI, Chennai, Tamil Nadu, India

来源：

2020 6TH IEEE INTERNATIONAL SYMPOSIUM ON SMART ELECTRONIC SYSTEMS (ISES 2020) (FORMERLY INIS) | 2020年

关键词：

biosensor; nanoscale MOSFET; high-k dielectrics; sensitivity; analytical model; FIELD-EFFECT TRANSISTOR; PERFORMANCE;

D O I：

10.1109/iSES50453.2020.00022

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

In this paper, a semi-quantum analytical model is developed for current transport simulation in a dielectrically modulated double gate (DG) MOSFET for biosensing applications. The model incorporates a self-consistent solution of two-dimensional Poisson's equation, terminal MOSFET capacitances and the number of conductance channels or modes to compute the drain current under ballistic limits of operation. The electrical characteristics of the sensor are investigated with the high-k gate dielectric layer for detecting different biomolecules. The findings from this study show that high-k dielectric in the MOSFET not only improved sensitivity but also shown significant variation of drain current when exposed to different types of biomolecules

引用

页码：48 / 50

页数：3

共 50 条

[1] 2-D Analytical Modeling and Simulation of Dual Material, Double Gate, Gate Stack Engineered, Junctionless MOSFET based Biosensor with Enhanced Sensitivity
Kumari, Monika
Singh, Niraj Kumar
Sahoo, Manodipan
Rahaman, Hafizur
SILICON, 2022, 14 (09) : 4473 - 4484
[2] 2-D Analytical Modeling and Simulation of Dual Material, Double Gate, Gate Stack Engineered, Junctionless MOSFET based Biosensor with Enhanced Sensitivity
Monika Kumari
Niraj Kumar Singh
Manodipan Sahoo
Hafizur Rahaman
Silicon, 2022, 14 : 4473 - 4484
[3] Sensitivity Enhancement of TMD MOSFET-Based Biosensor by Modeling and Optimization of Back Gate Parameters
Kumari, Monika
Sahoo, Manodipan
PROCEEDINGS OF THE 37TH INTERNATIONAL CONFERENCE ON VLSI DESIGN, VLSID 2024 AND 23RD INTERNATIONAL CONFERENCE ON EMBEDDED SYSTEMS, ES 2024, 2024, : 13 - 18
[4] Work function optimization for enhancement of sensitivity of dual-material (DM), double-gate (DG), junctionless MOSFET-based biosensor
Monika Kumari
Niraj Kumar Singh
Manodipan Sahoo
Hafizur Rahaman
Applied Physics A, 2021, 127
[5] Work function optimization for enhancement of sensitivity of dual-material (DM), double-gate (DG), junctionless MOSFET-based biosensor
Kumari, Monika
Singh, Niraj Kumar
Sahoo, Manodipan
Rahaman, Hafizur
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2021, 127 (02):
[6] Numerical assessment of dielectrically-modulated short- double-gate PNPN TFET-based label-free biosensor
Baruah, Karabi
Baishya, Srimanta
MICROELECTRONICS JOURNAL, 2023, 133
[7] Numerical modeling of a dielectric modulated surrounding-triple-gate germanium-source MOSFET (DM-STGGS-MOSFET)-based biosensor
Das, Amit
Rewari, Sonam
Kanaujia, Binod Kumar
Deswal, S. S.
Gupta, R. S.
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2023, 22 (02) : 742 - 759
[8] Performance assessment of Si based dual metal double gate vertical TFET biosensor
Das, Sourav
Kumar, Binay Binod
Bundela, Priyavand
Singh, Kunal
MICRO AND NANOSTRUCTURES, 2024, 191
[9] CHOICE OF GATE INSULATOR FOR TUNNELLING CURRENT MINIMIZATION AND EFFECTIVE GATE ELECTROSTATICS IN DOUBLE GATE NANOSCALE MOSFET
Thriveni, G.
Ghosh, Kaustab
2018 4TH INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS), 2018, : 34 - 36
[10] Advantages of Charge Plasma Based Double Gate Junctionless MOSFET Over Bulk MOSFET for Label Free Biosensing
Bhattacharyya, Amit
Mukherjee, Adrija
Chanda, Manash
De, Debashis
PROCEEDINGS OF 2ND INTERNATIONAL CONFERENCE ON VLSI DEVICE, CIRCUIT AND SYSTEM (IEEE VLSI DCS 2020), 2020, : 99 - 104

← 1 2 3 4 5 →