Analysis of silver thick-film contact formation on industrial silicon solar cells

被引：3

作者：

Grupp, G ^{[1
]}

Biro, D ^{[1
]}

Emanuel, G ^{[1
]}

Preu, R ^{[1
]}

Schitthelm, F ^{[1
]}

Willeke, G ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany

来源：

Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488376

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The silver thick-film contact is the most widely used front side contact for industrial silicon solar cells [1]. The objective of the presented investigations was to improve the understanding of front side contact formation by varying the contact firing process. We therefore introduced an additional temperature plateau in the cooling zone. The firing process was assessed based on the results of the IV characteristic. Fill factor, series resistance and open circuit voltage were the main values taken into consideration. Additionally we carried out specific contact resistance and Corescan measurements. The performance of the solar cells was characterized by spectrally resolved internal quantum efficiency measurements and thermographic measurements. The results were correlated with the variations of the contact firing and are discussed referring to the different models of the current transport mechanism in thick-film contacts.

引用

页码：1289 / 1292

页数：4

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