Radiative recombination lifetime of excitons in self-organized InAs/GaAs quantum dots

被引：24
|
作者：
Melliti, A [1 ]
Maaref, MA
Hassen, F
Hjiri, M
Maaref, H
Tignon, J
Sermage, B
机构：
[1] Inst Preparatoire Etudes Sci & Technol, Unite Rech Phys Semicond, La Marsa 2070, Tunisia
[2] Fac Sci Monastir, Lab Phys Semicond, Monastir, Turkey
[3] Ecole Normale Super, Lab Phys Mat Condensee, F-75231 Paris, France
[4] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
来源：
SOLID STATE COMMUNICATIONS | 2003年 / 128卷 / 6-7期
关键词：
InAs/GaAs; quantum dots; decay time; radiative lifetime; photoluminescence; temperature;
D O I：
10.1016/j.ssc.2003.08.020
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report an investigation of the exciton dynamics in self-organized InAs/GaAs quantum dots (QD's) grown by molecular-beam epitaxy on (001)-oriented GaAs substrate. We have combined continuous wave and time resolved luminescence as a function of temperature to obtain quantitative information on the recombination processes in the dots. We have found that the excitonic radiative lifetime of two monolayers InAs QD's is almost independent of temperature. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：213 / 217
页数：5
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