Physical Properties of Gd Doped ZnO Thin Films Grown by Spray Pyrolysis

被引：0

作者：

Chaki, I. ^{[1
]}

El Hat, A. ^{[1
]}

Mzerd, A. ^{[1
]}

Belayachi, A. ^{[1
]}

Regragui, M. ^{[1
]}

Ajjammouri, T. ^{[2
]}

Sekkat, Z. ^{[1
,2
]}

Abd-Lefdil, M. ^{[1
]}

机构：

[1] Univ Mohammed V Agdal, Phys Mat Lab, PB 1014, Rabat, Morocco

[2] Moroccan Fdn Adv Sci Innovat & Res, MAScIR, Opt & Photon Ctr, Rabat, Morocco

来源：

PROCEEDINGS OF 2015 3RD IEEE INTERNATIONAL RENEWABLE AND SUSTAINABLE ENERGY CONFERENCE (IRSEC'15) | 2015年

关键词：

ZnO; Gd; Spray Pyrolysis; Thin films; Rare earth; MAGNETIC-PROPERTIES; OPTICAL-PROPERTIES; FLUORINE;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Undoped ZnO, Gd doped ZnO (GZO) thin films were prepared by chemical spray pyrolysis method at 350 degrees C on glass substrates. The effect of gadolinium doping on structural, morphological, optical and electrical properties as function of dopant concentration has been studied. X-ray analysis showed that the films are polycrystalline fitting well with hexagonal wurtzite structure and have preferred orientation in [002] direction. The AFM analysis showed that the grain size as well as the roughness of the Gd doped ZnO films constantly decreases with increasing dopant content. The deposited films showed an average optical transmittance around 85% in the visible region and the optical band gap of the ZnO: Gd films decreases from 3.27 eV to 3.18 eV as dopant content increases. Hall Effect measurements showed that electrical conductivity, mobility carriers and carrier concentration of the films are increased after 1.5 % Gd doping concentration.

引用

页码：932 / 937

页数：6

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