Microscopy Visualization of Carrier Transport in CdSeTe/CdTe Solar Cells

被引:4
作者
Xiao, Chuanxiao [1 ,2 ,3 ]
Jiang, Chun-Sheng [4 ]
Nardone, Marco [5 ]
Albin, David [4 ]
Danielson, Adam [6 ]
Munshi, Amit H. [6 ]
Shimpi, Tushar [6 ]
Sampath, Walajabad [6 ]
Jones, Sean [4 ]
Al-Jassim, Mowafak M. [4 ]
Teeter, Glenn [4 ]
Haegel, Nancy M. [4 ]
Moutinho, Helio R. [4 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[3] Ningbo New Mat Testing & Evaluat Ctr CO Ltd, Ningbo 315201, Zhejiang, Peoples R China
[4] Natl Renewable Energy Lab, Golden, CO 80401 USA
[5] Bowling Green State Univ, Dept Phys & Astron, Bowling Green, OH 43403 USA
[6] Colorado State Univ, Ft Collins, CO 80523 USA
关键词
carrier transport; CdTe; CdSeTe; solar cell; microscopy; interface; recombination; THICKNESS; TEMPERATURE; STABILITY; LIFETIME; LAYERS;
D O I
10.1021/acsami.2c09426
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Solar cells are essentially minority carrier devices, and it is therefore of central importance to understand the pertinent carrier transport processes. Here, we advanced a transport imaging technique to directly visualize the charge motion and collection in the direction of relevant carrier transport and to understand the cell operation and degradation in state-of-the-art cadmium telluride solar cells. We revealed complex carrier transport profiles in the inhomogeneous polycrystalline thin-film solar cell, with the influence of electric junction, interface, recombination, and material composition. The pristine cell showed a unique dual peak in the carrier transport light intensity decay profile, and the dual peak feature disappeared on a degraded cell after light and heat stressing in the lab. The experiments, together with device modeling, suggested that selenium diffusion plays an important role in carrier transport. The work opens a new forum by which to understand the carrier transport and bridge the gap between atomic/nanometer-scale chemical/ structural and submicrometer optoelectronic knowledge.
引用
收藏
页码:39976 / 39984
页数:9
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