Effect of rapid thermal process on oxygen precipitation and denuded zone in nitrogen-doped silicon wafers

被引：27

作者：

Yu, XG ^{[1
]}

Yang, DR ^{[1
]}

Ma, XY ^{[1
]}

Que, DL ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2003年 / 69卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Czochralski silicon; nitrogen doping; rapid thermal process; denuded zone; oxygen precipitation;

D O I：

10.1016/S0167-9317(03)00276-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of rapid thermal process (RTP) on the oxygen precipitation and on the denuded zone (DZ) formation in nitrogen-doped Czochralski (NCZ) silicon wafers has been investigated. The DZ can be formed at the surface of NCZ wafers subjected to RTP annealing. However, the oxygen precipitation and bulk microdefects in NCZ silicon are changed by RTP preannealing, which is a result of N-N bonds broken during RTP treatment. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：97 / 104

页数：8

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