Growth of transparent conductive oxide ZnO films by atomic layer deposition

ZnO films have been grown by atomic layer deposition (ALD) using diethylzinc (DEZn) and H2O as reactant gases. Self-limiting growth occurred at substrate temperatures ranging from 105 to 165 degrees C. Self-limiting growth was also achieved when the flow rates of DEZn and H2O were varied. It was found that the orientation and surface morphology of the films were strongly dependent on life substrate temperature. A high electron mobility of 30 cm(2)/V . s was obtained for undoped ZnO films only 220 nm thick. The mobility of films was higher than that of films grown by MOCVD.