Plasmonic Modulator Using CMOS-Compatible Material Platform

被引：0

作者：

Babicheva, Viktoriia E. ^{[1
,2
,3
]}

Kinsey, Nathaniel ^{[2
]}

Naik, Gururaj V. ^{[2
,4
]}

Ferrera, Marcello ^{[2
,5
]}

Lavrinenko, Andrei V. ^{[1
]}

Shalaev, Vladimir M. ^{[2
,6
]}

Boltasseva, Alexandra ^{[1
,2
]}

机构：

[1] Tech Univ Denmark, Dept Photon Engn, DTU Foton, Oersteds Plads 343, DK-2800 Lyngby, Denmark

[2] Purdue Univ, Birck Nanotechnol Ctr, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[3] Natl Res Univ, Informat Technol Mech & Optic, Petersburg, VA 19710 USA

[4] Stanford Univ, Mat Sci & Engn Dept, Stanford, CA 94305 USA

[5] HeriotWatt Univ, Sch Engn & Phys Sci, Edinburgh, Midlothian, Scotland

[6] Russian Quantum Ctr, Moscow 143025, Russia

来源：

2014 8TH INTERNATIONAL CONGRESS ON ADVANCED ELECTROMAGNETIC MATERIALS IN MICROWAVES AND OPTICS (METAMATERIALS) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a design of ultra-compact plasmonic modulator is proposed and numerically analyzed. The device layout utilizes alternative plasmonic materials such as transparent conducting oxides and titanium nitride which potentially can be applied for CMOS compatible process. The modulation is obtained by varying the carrier concentration of the transparent conducting oxide layer and exciting plasmonic resonance in the structure. The analysis shows that an extinction ratio of 46 dB/mu m can be achieved at the telecommunication wavelength. Proposed structure is particularly convenient for integration with existing insulator-metal-insulator plasmonic waveguides as well as novel photonic/electronic hybrid circuits.

引用

页数：3

共 7 条

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