Electrical characteristics of gallium-indium-zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

被引：19
|
作者：
Her, Jim-Long [1 ]
Chen, Fa-Hsyang [2 ]
Chen, Ching-Hung [2 ]
Pan, Tung-Ming [2 ]
机构：
[1] Chang Gung Univ, Ctr Gen Educ, Div Nat Sci, Taoyuan 333, Taiwan
[2] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan
来源：
RSC ADVANCES | 2015年 / 5卷 / 12期
关键词：
FABRICATION; SILICON;
D O I：
10.1039/c4ra15538f
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In this study, we report the structural and electrical characteristics of high-kappa Sm2O3 and SmTiO3 charge trapping layers on an indium-gallium-zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications. The IGZO TFT non-volatile memory featuring a SmTiO3 charge trapping layer exhibited better characteristics, including a larger memory window (2.7 V), long charge retention time (10(5) s with charge loss <15%) and better endurance performance for program/erase cycles (10(4)), compared with a Sm2O3 charge trapping layer. These results can be attributed to the SmTiO3 film possessing a high dielectric constant and deep trapping level. The high-kappa SmTiO3 is an excellent candidate for use as the trapping layer in IGZO TFT non-volatile memories.
引用
收藏
页码：8566 / 8570
页数：5
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