Electrical characteristics of gallium-indium-zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

被引：19

作者：

Her, Jim-Long ^{[1
]}

Chen, Fa-Hsyang ^{[2
]}

Chen, Ching-Hung ^{[2
]}

Pan, Tung-Ming ^{[2
]}

机构：

[1] Chang Gung Univ, Ctr Gen Educ, Div Nat Sci, Taoyuan 333, Taiwan

[2] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan

来源：

RSC ADVANCES | 2015年 / 5卷 / 12期

关键词：

FABRICATION; SILICON;

D O I：

10.1039/c4ra15538f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this study, we report the structural and electrical characteristics of high-kappa Sm2O3 and SmTiO3 charge trapping layers on an indium-gallium-zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications. The IGZO TFT non-volatile memory featuring a SmTiO3 charge trapping layer exhibited better characteristics, including a larger memory window (2.7 V), long charge retention time (10(5) s with charge loss <15%) and better endurance performance for program/erase cycles (10(4)), compared with a Sm2O3 charge trapping layer. These results can be attributed to the SmTiO3 film possessing a high dielectric constant and deep trapping level. The high-kappa SmTiO3 is an excellent candidate for use as the trapping layer in IGZO TFT non-volatile memories.

引用

页码：8566 / 8570

页数：5

共 33 条

[11] Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer [J].

Jang, Jaeman ;

Park, Jae Chul ;

Kong, Dongsik ;

Kim, Dong Myong ;

Lee, Jang-Sik ;

Sohn, Byeong-Hyeok ;

Cho, Il Hwan ;

Kim, Dae Hwan .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (11) :3940-3947

[12] Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3) [J].

Jeon, S ;

Hwang, HS .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :6393-6395

[13] Bias-Stress-Stable Solution-Processed Oxide Thin Film Transistors [J].

Jeong, Youngmin ;

Bae, Changdeuck ;

Kim, Dongjo ;

Song, Keunkyu ;

Woo, Kyoohee ;

Shin, Hyunjung ;

Cao, Guozhong ;

Moon, Jooho .

ACS APPLIED MATERIALS & INTERFACES, 2010, 2 (03) :611-615

[14] The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application [J].

Jung, Ji Sim ;

Rha, Sang-Ho ;

Kim, Un Ki ;

Chung, Yoon Jang ;

Jung, Yoon Soo ;

Choi, Jung-Hae ;

Hwang, Cheol Seong .

APPLIED PHYSICS LETTERS, 2012, 100 (18)

[15] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[16] Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display [J].

Kwon, Jang Yeon ;

Son, Kyoung Seok ;

Jung, Ji Sim ;

Kim, Tae Sang ;

Ryu, Myung Kwan ;

Park, Kyung Bae ;

Yoo, Byung Wook ;

Kim, Jung Woo ;

Lee, Young Gu ;

Park, Kee Chan ;

Lee, Sang Yoon ;

Kim, Jong Min .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (12) :1309-1311

[17] Two-bit lanthanum oxide trapping layer nonvolatile flash memory [J].

Lin, Yu-Hsien ;

Chien, Chao-Hsin ;

Yang, Tsung-Yuan ;

Lei, Tan-Fu .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (07) :H619-H622

[18] Effect of Ti incorporation on the interfacial and optical properties of HfTiO thin films [J].

Liu, M. ;

Zhang, L. D. ;

He, G. ;

Wang, X. J. ;

Fang, M. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (02)

[19]

Moulder J.F., 1979, HDB XRAY PHOTOELECTR

[20] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492

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