Electrical characteristics of gallium-indium-zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

被引：19

作者：

Her, Jim-Long ^{[1
]}

Chen, Fa-Hsyang ^{[2
]}

Chen, Ching-Hung ^{[2
]}

Pan, Tung-Ming ^{[2
]}

机构：

[1] Chang Gung Univ, Ctr Gen Educ, Div Nat Sci, Taoyuan 333, Taiwan

[2] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan

来源：

RSC ADVANCES | 2015年 / 5卷 / 12期

关键词：

FABRICATION; SILICON;

D O I：

10.1039/c4ra15538f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this study, we report the structural and electrical characteristics of high-kappa Sm2O3 and SmTiO3 charge trapping layers on an indium-gallium-zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications. The IGZO TFT non-volatile memory featuring a SmTiO3 charge trapping layer exhibited better characteristics, including a larger memory window (2.7 V), long charge retention time (10(5) s with charge loss <15%) and better endurance performance for program/erase cycles (10(4)), compared with a Sm2O3 charge trapping layer. These results can be attributed to the SmTiO3 film possessing a high dielectric constant and deep trapping level. The high-kappa SmTiO3 is an excellent candidate for use as the trapping layer in IGZO TFT non-volatile memories.

引用

页码：8566 / 8570

页数：5

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