physical vapor deposition;
chemical vapor deposition;
atomic layer deposition;
electrochemical deposition;
nanorods;
graphene;
transition metal dichalcogenide;
Li metal anode;
CHEMICAL-VAPOR-DEPOSITION;
ATOMIC LAYER DEPOSITION;
OPTIMAL OPERATION;
THIN-FILMS;
GROWTH;
SIMULATION;
GRAPHENE;
ELECTRODEPOSITION;
MORPHOLOGY;
MECHANISM;
D O I:
10.3389/fphy.2021.631918
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
Monte Carlo (MC) and kinetic Monte Carlo (kMC) models are widely used for studying the physicochemical surface phenomena encountered in most deposition processes. This spans from physical and chemical vapor deposition to atomic layer and electrochemical deposition. MC and kMC, in comparison to popular molecular methods, such as Molecular Mechanics/Dynamics, have the ability to address much larger time and spatial scales. They also offer a far more detailed approach of the surface processes than continuum-type models, such as the reaction-diffusion models. This work presents a review of the modern applications of MC/kMC models employed in deposition processes.
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Johnson, Richard W.
;
Hultqvist, Adam
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Hultqvist, Adam
;
Bent, Stacey F.
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Johnson, Richard W.
;
Hultqvist, Adam
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Hultqvist, Adam
;
Bent, Stacey F.
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA