Antimony assisted low-temperature processing of CuIn1-xGaxSe2-ySy solar cells

被引：72

作者：

Yuan, Min ^{[1
]}

Mitzi, David B. ^{[1
]}

Gunawan, Oki ^{[1
]}

Kellock, Andrew J. ^{[2
]}

Chey, S. Jay ^{[1
]}

Deline, Vaughn R. ^{[2
]}

机构：

[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

THIN SOLID FILMS | 2010年 / 519卷 / 02期

关键词：

CIGS; Solar cells; Antimony doping; Low temperature; Non vacuum; CU(IN; GA)SE-2; FILMS; NAF; COEVAPORATION; OPTIMIZATION; GROWTH;

D O I：

10.1016/j.tsf.2010.08.135

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Application of the Sb-doping method to low-temperature (<= 400 degrees C) processing of CuIn1-xGaxSe2-ySy (CIGS) solar cells is explored using a hydrazine-based approach to deposit the absorber films Power conversion efficiencies of 10 5% and 8 4% have been achieved for CIGS devices (0 45 cm(2) device area) processed at 400 C and 360 degrees C respectively with an Sb-incorporation level at 1 2 mol % (relative to the moles of CIGS) Significant Sb-induced grain size enhancement was confirmed for these low processing temperatures using cross-sectional scanning electron microscopy and an average 2-3% absolute efficiency Improvement was achieved in Sb-doped samples compared to their Sb-free sister samples With Sb inclusion the CIGS film grain growth temperature is lowered to well below 450 degrees C a range compatible with flexible polymer substrate materials such as polyimide This method opens up access to opportunities in low temperature processing of CIGS solar cells an area that is being actively pursued using both traditional vacuum-based as well as other solution-based deposition techniques (C) 2010 Elsevier B V All rights reserved

引用

页码：852 / 856

页数：5

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